Film for backlight unit and backlight unit and liquid crystal display including same

ABSTRACT

A film for a backlight unit including a semiconductor nanocrystal-polymer composite film including a semiconductor nanocrystal and a matrix polymer in which the semiconductor nanocrystal is dispersed, wherein the matrix polymer is a polymer produced by a polymerization of a multifunctional photo-curable oligomer, a mono-functional photo-curable monomer, and a multifunctional photo-curable cross-linking agent, the multifunctional photo-curable oligomer has an acid value of less than or equal to about 0.1 mg of KOH/g, and a content (A 1 ) of a first structural unit derived from the multifunctional photo-curable oligomer, a content (A 2 ) of a second structural unit derived from the mono-functional photo-curable monomer, and a content (A 3 ) of a third structural unit derived from the multifunctional photo-curable cross-linking agent satisfy Equation 1:
 
 A   1 &lt;( A   2   +A   3 ).  Equation 1

CROSS-REFERENCE TO RELATED APPLICATION

This application is a division of U.S. patent application Ser. No.13/834,209 which claims priority to Korean Patent Application No.10-2012-0035157, filed on Apr. 4, 2012, and all the benefits accruingtherefrom under 35 U.S.C. §119, the contents of which are incorporatedherein in their entirety by reference.

BACKGROUND

1. Field

This disclosure relates to a film for a backlight unit, and a backlightunit and liquid crystal display device including the same.

2. Description of the Related Art

Unlike plasma display panels (“PDPs”) and field emission displays(“FEDs”) which form an image using self-emitting light, liquid crystaldisplay (“LCD”) devices form an image by receiving external light. Thus,the LCD devices require a backlight unit for emitting light on the backsurface thereof.

A cold cathode fluorescent lamp (“CCFL”) has been used as a light sourcefor an LCD device. However, when the CCFL is used as a light source, itmay not provide uniform luminance, or the color purity may bedeteriorated, as the LCD device has a larger screen.

As a result, a backlight unit which uses three color LEDs as a lightsource has been recently developed. Since the backlight unit using thethree color LEDs as the light source produces improved color purity, ascompared to the backlight unit using the CCFL, it may, for example, beused in a high quality display device. However, the backlight unit usingthree color LEDs as a light source costs more than the backlight unitusing the CCFL as a light source. To mitigate this problem, a white LEDwhich emits light by converting light output from a single color LEDchip to white light has been proposed.

Although the white LED is not as expensive as the three color LEDs,color purity and color reproducibility are reduced compared to colorpurity and color reproducibility of an LCD device including the threecolor LEDs. Thus, there remains a need to develop a light source capableof maintaining price competitiveness as well as improving color purityand color reproducibility.

SUMMARY

An embodiment provides a film for a backlight unit (“BLU”) for a liquidcrystal display device using a light emitting diode (“LED”) as a lightsource.

Another embodiment provides a backlight unit including the film for abacklight unit.

Yet another embodiment provides a liquid crystal display deviceincluding the backlight unit.

According to an embodiment, provided is a film for a backlight unit thatincludes a semiconductor nanocrystal-polymer composite film including asemiconductor nanocrystal and a matrix polymer in which thesemiconductor nanocrystal is dispersed,

wherein the matrix polymer includes a polymerization product of amultifunctional photo-curable oligomer, a mono-functional photo-curablemonomer, and a multifunctional photo-curable cross-linking agent,

the multifunctional photo-curable oligomer has an acid value of lessthan or equal to about 0.1 milligram of KOH/gram, and

a content (A₁) of a first structural unit derived from themultifunctional photo-curable oligomer, a content (A₂) of a secondstructural unit derived from the mono-functional photo-curable monomer,and a content (A₃) of a third structural unit derived from themultifunctional photo-curable cross-linking agent satisfy the followingEquation 1.A ₁<(A ₂ +A ₃).  Equation 1

The ratio A₁:(A₂+A₃) may be from about 10:90 to about 55:45.

The multifunctional photo-curable oligomer may be an oligomer includingat least two acrylate functional groups or at least two methacrylatefunctional groups, and may be selected from urethane (meth)acrylate,epoxy (meth)acrylate, polyester (meth)acrylate, acrylic (meth)acrylate,polybutadiene (meth)acrylate, silicone (meth)acrylate, melamine(meth)acrylate, and a combination thereof.

The multifunctional photo-curable oligomer may have a weight averagemolecular weight (“Mw”) of about 1,000 to about 20,000.

The multifunctional photo-curable oligomer may have an acid value ofless than or equal to about 0.01 milligram of KOH/gram.

The mono-functional photo-curable monomer may be a compound representedby the following Chemical Formula 1.R¹—X¹  Chemical Formula 1

In Chemical Formula 1, R¹ is a substituted or unsubstituted C6 to C30linear or branched aliphatic group, a substituted or unsubstituted C5 toC30 alicyclic group, a substituted or unsubstituted C2 to C30 aromaticgroup, and

X¹ is an acrylate group, a methacrylate group, an acryloyl group, amethacryloyl group, or a C2 to C10 alkenyl group.

The mono-functional photo-curable monomer may be selected fromisobornyl(meth)acrylate, isooctyl(meth)acrylate, lauryl(meth)acrylate,benzoyl(meth)acrylate, norbornyl(meth)acrylate,cyclohexyl(meth)acrylate, n-hexyl(meth)acrylate, adamantyl acrylate,cyclopentyl acrylate, and a combination thereof.

The mono-functional photo-curable monomer may have a solubilityparameter of about 8 to about 10 (calories/centimeter³)^(1/2) for asemiconductor nanocrystal.

When a solubility parameter of the mono-functional photo-curable monomeris δ_(A), and a solubility parameter of the aromatic hydrocarbon-basedsolvent or halogenated aliphatic hydrocarbon-based solvent is δ_(B), adifference of the solubility parameter (|δ_(A)−δ_(B)|) may be less thanor equal to about 5.

The multifunctional photo-curable cross-linking agent may be a compoundrepresented by the following Chemical Formula 2.

In Chemical Formula 2, R² is a substituted or unsubstituted C3 to C30linear or branched aliphatic group, a substituted or unsubstituted C3 toC30 alicyclic group, or a substituted or unsubstituted C2 to C30aromatic group,

X² is an acrylate group, or a methacrylate group, and

b is greater than or equal to 2, and does not exceed a valence of R².

The mono-functional photo-curable monomer and the multifunctionalphoto-curable cross-linking agent may include the same functional group.

The semiconductor nanocrystal may be selected from a Group II-VIcompound, a Group III-V compound, a Group IV-VI compound, a Group IVelement, a Group IV compound, and a combination thereof.

The semiconductor nanocrystal may have a full width at half maximum(“FWHM”) of less than or equal to about 45 nanometers in a lightemitting wavelength spectrum.

The semiconductor nanocrystal-polymer composite film may further includean inorganic oxide.

The semiconductor nanocrystal may form a cluster including a pluralityof semiconductor nanocrystals, and the cluster may have a particle sizeof less than or equal to about 2 micrometers.

The semiconductor nanocrystal-polymer composite film may include a firstcomposite including a red semiconductor nanocrystal and a firsttransparent matrix encapsulating the red semiconductor nanocrystal; asecond composite including a green semiconductor nanocrystal and asecond transparent matrix encapsulating the green semiconductornanocrystal; and a matrix polymer in which the first composite and thesecond composite are dispersed.

The first composite and the second composite may each have particle sizeof less than or equal to about 2 micrometers.

The semiconductor nanocrystal-polymer composite film may include acomposite including a mixture of a red semiconductor nanocrystal and agreen semiconductor nanocrystal and a transparent matrix encapsulatingthe mixture; and a matrix polymer in which the composite is dispersed.

The composite may have a particle size of less than or equal to about 2micrometers.

The semiconductor nanocrystal-polymer composite film may have apredetermined pattern on at least one surface.

The film for a backlight unit may further include a barrier filmdisposed on at least one side of the semiconductor nanocrystal-polymercomposite film.

The barrier film may include a polymer selected from a polyester, apolycarbonate, a polyolefin, a cyclic olefin polymer (“COP”), apolyimide, a polymerization product of a first monomer including atleast two thiol (—SH) groups at a terminal end and a second monomerincluding at least two carbon-carbon unsaturated bond-containing groups,and a combination thereof.

The barrier film may further include an inorganic oxide.

The barrier film may have a protruded and recessed pattern on at leastone side of the semiconductor nanocrystal-polymer composite film.

The semiconductor nanocrystal-polymer composite film may be providedfrom a photo-curable composition including a semiconductor nanocrystal,a multifunctional photo-curable oligomer, a mono-functionalphoto-curable monomer, a multifunctional photo-curable cross-linkingagent, and a photoinitiator. When a light emitting wavelength of thephoto-curable composition is λ_(A) and an intrinsic light emittingwavelength of the semiconductor nanocrystal is λ_(B), a difference|λ_(A)−λ_(B)| may be in the range of less than or equal to about 5nanometers.

According to another embodiment, a backlight unit including the film fora backlight unit is provided.

The backlight unit includes

an LED light source;

the film for a backlight unit disposed separate from the LED lightsource to convert light emitted from the LED light source to white lightand to provide the converted white light toward liquid crystal panel;and

a light guide panel disposed between the LED light source and the filmfor a backlight unit.

The backlight unit may further include at least one film selected from adiffusion plate, a prism sheet, a microlens sheet, and a brightnessimprovement film on the film for a backlight unit.

The film for a backlight unit may be positioned between at least twofilms selected from a light guide, a diffusion plate, a prism sheet, amicrolens sheet, and a brightness improvement film (e.g., doublebrightness improvement film).

The white light provided from the film for a backlight unit may have Cxranging from about 0.20 to about 0.50 and Cy ranging from about 0.18 toabout 0.42 in a CIE 1931 chromaticity diagram. When the LED light sourceis a blue LED light source, the green semiconductor nanocrystal and thered semiconductor nanocrystal may be included to provide a ratio ofoptical density (“OD”) (absorbance of first absorption maximumwavelength at UV-Vis absorption spectrum) of about 2:1 to about 7:1.

The film for a backlight unit may include a plurality of layers whichare disposed to provide a light emitting wavelength of lower energygoing toward the LED light source.

According to yet another embodiment, a liquid crystal display device isprovided.

According to still another embodiment, provided is a method ofmanufacturing a film for a backlight unit that includes:

contacting semiconductor nanocrystals dispersed in a solvent with amono-functional photo-curable monomer to prepare a mixture;

contacting a multifunctional photo-curable oligomer, a multifunctionalphoto-curable cross-linking agent, and a photoinitiator with the mixtureto prepare a photo-curable composition;

coating the photo-curable composition on a substrate to provide aphoto-curable composition coating; and

photo-curing the photo-curable composition coating to prepare the film.

Before photo-curing, the photo-curable composition coating may becontacted with a mold with a predetermined pattern, to form a pattern onthe coating, then the mold removed prior to photo-curing.

BRIEF DESCRIPTION OF THE DRAWINGS

These and/or other aspects will become apparent and more readilyappreciated from the following description of the embodiments, taken inconjunction with the accompanying drawings of which:

FIG. 1 is a schematic view of a film for a backlight unit according toan embodiment;

FIG. 2 is a schematic view of a film for a backlight unit according toanother embodiment;

FIG. 3 is a schematic view of a film for a backlight unit according toanother embodiment;

FIG. 4 is a schematic view of a liquid crystal display device accordingto another embodiment;

FIG. 5 is a schematic view of a liquid crystal display device accordingto another embodiment;

FIG. 6 is a schematic view of a liquid crystal display device accordingto another embodiment;

FIG. 7 is a graph of intensity (arbitrary unit, a. u.) versus wavelength(nanometer, nm) showing light emitting characteristics of semiconductornanocrystals varying in a kind of a mono-functional photo-curablemonomer.

DETAILED DESCRIPTION

This disclosure will be described more fully hereinafter in thefollowing detailed description of this disclosure, in which some but notall embodiments of this disclosure are described. This disclosure may beembodied in many different forms and is not to be construed as limitedto the embodiments set forth herein; rather, these embodiments areprovided so that this disclosure will fully convey the scope of theinvention to those skilled in the art.

In order to clarify embodiments of the present disclosure, parts that donot have relationships are omitted, and the same or similar constituentelements are assigned with the same reference number through thisdisclosure.

In the drawings, the thickness of layers, films, panels, regions, etc.,are exaggerated for clarity. Like reference numerals designate likeelements throughout the specification.

Accordingly, the embodiments are merely described below, by referring tothe figures, to explain aspects of the present description. As usedherein, the term “and/or” includes any and all combinations of at leastone of the associated listed items. Expressions such as “at least one,”when preceding a list of elements, modify the entire list of elementsand do not modify the individual elements of the list.

It will be understood that when an element such as a layer, film,region, or substrate is referred to as being “on” another element, itcan be directly on the other element or intervening elements may also bepresent. In contrast, when an element is referred to as being “directlyon” another element, there are no intervening elements present.

It will be understood that, although the terms first, second, third etc.may be used herein to describe various elements, components, regions,layers and/or sections, these elements, components, regions, layersand/or sections should not be limited by these terms. These terms areonly used to distinguish one element, component, region, layer orsection from another element, component, region, layer, or section.Thus, a first element, component, region, layer, or section discussedbelow could be termed a second element, component, region, layer, orsection without departing from the teachings of the present embodiments.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting. As used herein, thesingular forms “a,” “an” and “the” are intended to include the pluralforms as well, unless the context clearly indicates otherwise. It willbe further understood that the terms “comprises” and/or “comprising,” or“includes” and/or “including” when used in this specification, specifythe presence of stated features, regions, integers, steps, operations,elements, and/or components, but do not preclude the presence oraddition of one or more other features, regions, integers, steps,operations, elements, components, and/or groups thereof.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this general inventive conceptbelongs. It will be further understood that terms, such as those definedin commonly used dictionaries, should be interpreted as having a meaningthat is consistent with their meaning in the context of the relevant artand the present disclosure, and will not be interpreted in an idealizedor overly formal sense unless expressly so defined herein.

As used herein, when a definition is not otherwise provided, the term“substituted” may refer to a group or compound substituted with asubstituent selected from a C1 to C30 alkyl group, a C2 to C30 alkenylgroup, a C2 to C30 alkynyl group, a C6 to C30 aryl group, a C7 to C30alkylaryl group, a C1 to C30 alkoxy, a C6 to C30 aryloxy group, a C1 toC30 heteroalkyl group, a C3 to C30 heteroalkylaryl group, a C3 to C30cycloalkyl group, a C3 to C15 cycloalkenyl group, a C6 to C30cycloalkynyl group, a C2 to C30 heterocycloalkyl group, a halogen (—F,—Cl, —Br, or —I), a nitro group (—NO₂), a cyano group (—CN), an aminogroup (NRR′, wherein R and R′ are independently hydrogen or a C1 to C6alkyl group), an azido group (—N₃), an amidino group (—C(═NH)NH₂), ahydrazino group (—NHNH₂), a hydrazono group (═N(NH₂), an aldehyde group(—C(═O)H), a carbamoyl group (—C(O)NH₂), a thiol group (—SH), an estergroup (—C(═O)OR, wherein R is a C1 to C6 alkyl group or a C6 to C12 arylgroup), and a combination thereof instead of hydrogen, provided that thesubstituted atom's normal valence is not exceeded.

As used herein, when a definition is not otherwise provided, the prefix“hetero” may refer to a group that includes at least one ring member(e.g., 1 to 4 ring members) that is a heteroatom (e.g., 1 to 4heteroatoms, each independently selected from N, O, S, Si, or P). Thetotal number of ring members may be 3 to 10. If multiple rings arepresent, each ring is independently aromatic, saturated, or partiallyunsaturated, and multiple rings, if present, may be fused, pendant,spirocyclic, or a combination thereof. Heterocycloalkyl groups includeat least one non-aromatic ring that contains a heteroatom ring member.Heteroaryl groups include at least one aromatic ring that contains aheteroatom ring member. Non-aromatic and/or carbocyclic rings may alsobe present in a heteroaryl group, provided that at least one ring isboth aromatic and contains a ring member that is a heteroatom.

As used herein, the term “functional” may refer to photo-curablefunctional group.

As used herein, the term “combination thereof” refers to a mixture, astacked structure, a composite, an alloy, a blend, a reaction product,or the like.

As used herein, the term “(meth)acrylate” may be acrylate ormethacrylate.

As used herein, the term “alkyl” refers to a monovalent group derivedfrom a straight or branched chain saturated aliphatic hydrocarbon, andhaving a specified number of carbon atoms. Alkyl groups include, forexample, groups having from 1 to 30 carbon atoms (C1-C30 alkyl).

As used herein, the term “alkenyl” refers to a monovalent group derivedfrom a straight or branched chain saturated aliphatic hydrocarbon,having at least one double bond, and having a specified number of carbonatoms. Alkenyl groups include, for example, groups having from 2 to 30carbon atoms (C2-C30 alkenyl).

As used herein, the term “alkynyl” refers to a monovalent group derivedfrom a straight or branched chain saturated aliphatic hydrocarbon,having at least one triple bond, and having a specified number of carbonatoms. Alkynyl groups include, for example, groups having from 2 to 30carbon atoms (C2-C30 alkynyl).

As used herein, the term “aryl” refers to a monovalent group derivedfrom a cyclic moiety in which all ring members are carbon and at leastone ring is aromatic, and having a specified number of carbon atoms.Aryl groups include, for example, groups having from 6 to 30 carbonatoms (C6-C30 aryl).

As used herein, the term “alkylaryl” refers to an alkyl group covalentlylinked to a substituted and unsubstituted aryl group, and having aspecified number of carbon atoms. Alkylaryl groups include, for example,groups having from 7 to 30 carbon atoms (C7-C30 alkylaryl).

As used herein, the term “alkoxy” refers to an alkyl group which islinked via an oxygen, and having a specified number of carbon atoms.Alkoxy groups include, for example, from 1 to 30 carbon atoms (C1-C30alkoxy groups).

As used herein, the term “aryloxy” refers to an aryl group which islinked via an oxygen, and having a specified number of carbon atoms.Aryloxy groups include, for example, from 6 to 30 carbon atoms (C6-C30aryloxy groups).

As used herein, the term “heteroalkyl” refers to an alkyl groupcomprising at least one heteroatom covalently bonded to one or morecarbon atoms of the alkyl group, and having a specified number of carbonatoms. Each heteroatom is independently chosen from nitrogen (N), oxygen(O), sulfur (S), and phosphorus (P). Heteroalkyl groups include, forexample, from 1 to 30 carbon atoms (C1-C30 heteroalkyl group).

As used herein, the term “heteroalkylaryl” refers to an alkylaryl groupcomprising at least one heteroatom covalently bonded to one or morecarbon atoms of the alkyl group, and having a specified number of carbonatoms. Each heteroatom is independently chosen from nitrogen (N), oxygen(O), sulfur (S), and phosphorus (P). Heteroalkylaryl groups include, forexample, from 7 to 30 carbon atoms (C7-C30 heteroalkylaryl group).

As used herein, the term “cycloalkyl” refers to a saturated hydrocarbonring group, having only carbon ring atoms and having a specified numberof carbon atoms. Cycloalkyl groups include, for example, from 3 to 30carbon atoms (C3-C30 cycloalkyl group).

As used herein, the term “cycloalkenyl” refers to a saturatedhydrocarbon ring group, having only carbon ring atoms, having at leastone double bond, and having a specified number of carbon atoms.Cycloalkenyl groups include, for example, from 3 to 30 carbon atoms(C3-C30 cycloalkenyl group).

As used herein, the term “cycloalkynyl” refers to a saturatedhydrocarbon ring group, having only carbon ring atoms, having at leastone triple bond, and having a specified number of carbon atoms.Cycloalkynyl groups include, for example, from 3 to 30 carbon atoms(C3-C30 cycloalkynyl group).

As used herein, the term “alkylene” refers to a straight, branched orcyclic divalent aliphatic hydrocarbon group having a specified number ofcarbon atoms. Alkylene groups include, for example, from C1 to C30carbon atoms (C1-C30 alkylene group).

As used herein, the term “alkynelene” refers to a straight or branchedchain, divalent hydrocarbon group having at least one carbon-carbondouble bond, and having a specified number of carbon atoms. Alkynelenegroups include, for example, from C2 to C30 carbon atoms (C2-C30alkynelene group).

Hereinafter, referring to the drawings, a film for a backlight unitaccording to an embodiment is described.

FIG. 1 is a schematic view of the film 10 for a backlight unit accordingto an embodiment.

Referring to FIG. 1, the film for a backlight unit 10 includes asemiconductor nanocrystal-polymer composite film 12 including a matrixpolymer 19 including a red semiconductor nanocrystal 13 and a greensemiconductor nanocrystal 15 dispersed therein. The matrix polymer 19 isa polymer produced by polymerization of a multifunctional photo-curableoligomer, a mono-functional photo-curable monomer, and a multifunctionalphoto-curable cross-linking agent.

The multifunctional photo-curable oligomer may maintain mechanicalproperties of the semiconductor nanocrystal-polymer composite film 12and dispersion of the semiconductor nanocrystal. Such a multifunctionalphoto-curable oligomer may be an oligomer including at least twoacrylate functional groups or at least two methacrylate functionalgroups, and in an embodiment, may be an oligomer including about 2 toabout 6 acrylate functional groups or about 2 to about 6 methacrylatefunctional groups. For example, the oligomer may be urethane(meth)acrylate, epoxy (meth)acrylate, polyester (meth)acrylate, acrylic(meth)acrylate, polybutadiene (meth)acrylate, silicone (meth)acrylate,melamine (meth)acrylate, and the like.

The multifunctional photo-curable oligomer may be synthesized by ageneral method. For example, urethane acrylate may be prepared byreacting aliphatic isocyanate with aliphatic polyol to obtain aprepolymer capped with an isocyanate group at the terminal end, andreacting the prepolymer with hydroxy acrylate.

The multifunctional photo-curable oligomer may have a weight averagemolecular weight (Mw) of about 1,000 to about 20,000, and in anembodiment, about 5,000 to about 10,000. The multifunctionalphoto-curable oligomer may have a viscosity of about 10 Pascal×second(“Pa·s”) to about 2,000 Pa·s, and in an embodiment, about 20 Pa·s toabout 1,000 Pa·s at about 25° C. Within the weight average molecularweight or viscosity ranges, the semiconductor nanocrystal-polymercomposite film 12 may maintain improved mechanical properties anddispersion of the semiconductor nanocrystals.

The multifunctional photo-curable oligomer may have an acid value ofless than or equal to about 0.1 milligram of KOH/gram (“mg of KOH/g”),and in an embodiment, less than or equal to about 0.01 mg of KOH/g. Theacid value, as used herein, refers to an amount of KOH required forneutralizing 1 gram (“g”) of the multifunctional photo-curable oligomer.The multifunctional photo-curable oligomer does not have a hydroxylgroup or a carboxyl group that may increase an acid value. Within theforegoing acid value ranges, the multifunctional photo-curable oligomerhas little acidity, so light emitting characteristics of thesemiconductor nanocrystals 13 and 15 may be improved.

The multifunctional photo-curable oligomer may include a group selectedfrom an aliphatic group, an alicyclic group, and an aromatic group whichare substituted with an amino group (NRR′, wherein R and R′ areindependently hydrogen or a C1 to C6 alkyl group), an azido group (—N₃),an amidino group (—C(═NH)NH₂), a hydrazine group (—NHNH₂), a hydrazonogroup (═N(NH₂), an aldehyde group (—C(═O)H), a carbamoyl group, a thiolgroup, or an ester group (—C(═O)OR, wherein R is a C1 to C6 alkyl groupor a C6 to C12 aryl group). The multifunctional photo-curable oligomerincluding the forgoing substituting group may have improved affinity forthe semiconductor nanocrystals 13 and 15 and thus improve dispersion ofthe semiconductor nanocrystals 13 and 15. The mono-functionalphoto-curable monomer may be represented by the following ChemicalFormula 1.R¹—X¹  Chemical Formula 1

In Chemical Formula 1, R¹ is a substituted or unsubstituted C6 to C30linear or branched aliphatic group, a substituted or unsubstituted C5 toC30 alicyclic group, or a substituted or unsubstituted C2 to C30aromatic group, and

X¹ is an acrylate group, a methacrylate group, an acryloyl group, amethacryloyl group, or a C2 to C10 alkenyl group (e.g., vinyl group,allyl group, butenyl group, and the like).

The aliphatic group may refer to a C6 to C30 linear or branched alkylgroup or a C6 to C30 linear or branched alkenyl group, wherein at leastone methylene group (—CH₂—) of the alkyl group or alkenyl group isoptionally replaced by a sulfonyl group (—S(═O)₂—), a carbonyl group(—C(═O)—), an ether group (—O—), a sulfide group (—S—), a sulfoxidegroup (—S(═O)—), an ester group (—C(═O)O—), an amide group (—C(═O)NR—)(wherein R is hydrogen or a C1 to C10 alkyl group), —NR— (wherein R ishydrogen or a C1 to C10 alkyl group), or a combination thereof.

The alicyclic group may be a C5 to C30 cycloalkyl group, a C5 to C30cycloalkenyl group, or a C3 to C30 heterocycloalkyl group.

The aromatic group may be a C6 to C30 aryl group or a C2 to C30heteroaryl group.

In an embodiment, considering dispersion of the semiconductornanocrystals 13 and 15, in Chemical Formula 1, R¹ may be a C6 to C30alkyl group, and in an embodiment, may be a C8 to C30 alkyl group thathas a long chain.

The mono-functional photo-curable monomer may includeisobornyl(meth)acrylate, isooctyl(meth)acrylate, lauryl(meth)acrylate,benzoyl(meth)acrylate, norbornyl(meth)acrylate,cyclohexyl(meth)acrylate, n-hexyl(meth)acrylate, adamantyl acrylate,cyclopentyl acrylate, and a combination thereof.

The mono-functional photo-curable monomer may function as a solvent. Themono-functional photo-curable monomer may reduce a viscosity of acomposition for the semiconductor nanocrystal-polymer composite film 12to improve its workability, and improve dispersion of the semiconductornanocrystals 13 and 15 in the semiconductor nanocrystal-polymercomposite film 12.

Luminance intensity after dispersing the semiconductor nanocrystals inthe mono-functional photo-curable monomer may be maintained up to about90% or more, and in an embodiment, to about 95% or more of intrinsicluminance intensity of the semiconductor nanocrystal. Themono-functional photo-curable monomer may maintain improved lightemitting characteristics of the semiconductor nanocrystals.

The mono-functional photo-curable monomer may have a solubilityparameter of about 8 to about 10 for the semiconductor nanocrystals 13and 15. Within the foregoing solubility parameter range, dispersion ofthe semiconductor nanocrystals may be improved.

When a solubility parameter of the mono-functional photo-curable monomeris δ_(A), and a solubility parameter of the aromatic hydrocarbon-basedsolvent or halogenated aliphatic hydrocarbon-based solvent is δ_(B), adifference of the solubility parameter |δ_(A)−δ_(B)| may be less than orequal to about 5, and in an embodiment, equal to or less than about 3.When the difference of the solubility parameter is within the foregoingranges, dispersion of the semiconductor nanocrystals 13 and 15 may beimproved. The aromatic hydrocarbon-based solvent may be a C6 to C30arene compound, and for example, benzene, toluene, ethylbenzene, xylene,and the like, and the halogenated aliphatic hydrocarbon-based solventmay be a C1 to C30 alkane compound substituted with a halogen (F, Cl,Br, or I), and for example, chloroform, dichloromethane, carbontetrachloride, 1,2-dichloroethane, and the like.

The R¹ may be selected from an aliphatic group, an alicyclic group, andan aromatic group which are substituted with one substituent selectedfrom an amino group (NRR′, wherein R and R′ are independently hydrogenor a C1 to C6 alkyl group), an azido group (—N₃), an amidino group(—C(═NH)NH₂), a hydrazine group (—NHNH₂), a hydrazono group (═N(NH₂), analdehyde group (—C(═O)H), a carbamoyl group (—C(═O)NH₂), a thiol group(—SH), or an ester group (—C(═O)OR, wherein R is a C1 to C6 alkyl groupor a C6 to C12 aryl group), and a combination thereof. The R¹substituted with the forgoing substituents may have improved affinityfor the semiconductor nanocrystals 13 and 15 and thus may improvedispersion of the semiconductor nanocrystals 13 and 15.

The multifunctional photo-curable cross-linking agent may be a compoundrepresented by the following Chemical Formula 2.

In Chemical Formula 2, R² is a substituted or unsubstituted C3 to C30linear or branched aliphatic group, a substituted or unsubstituted C3 toC30 alicyclic group, a substituted or unsubstituted C2 to C30 aromaticgroup,

X² is an acrylate group, or a methacrylate group, and

b is greater than or equal to 2, and does not exceed a valence of R².

In an embodiment, in Chemical Formula 2, R² may be a substituted orunsubstituted C3 to C30 linear or branched aliphatic alcohol group, asubstituted or unsubstituted C3 to C30 alicyclic alcohol group, or asubstituted or unsubstituted C2 to C30 aromatic alcohol group.

The aliphatic group may be a C3 to C30 linear or branched alkyl group orC3 to C30 linear or branched alkenyl group, in an embodiment, may be aC6 to C30 linear or branched alkyl group or a C6 to C30 linear orbranched alkenyl group, and in another embodiment, may be a C8 to C30linear or branched alkyl group or a C8 to C30 linear or branched alkenylgroup, wherein at least one methylene group (—CH₂—) of the alkyl groupor alkenyl group is optionally replaced by a sulfonyl group (—S(═O)₂—),a carbonyl group (—C(═O)—), an ether group (—O—), a sulfide group (—S—),a sulfoxide group (—S(═O)—), an ester group (—C(═O)O—), an amide group(—C(═O)NR—) (wherein R is hydrogen or a C1 to C10 alkyl group), —NR—(wherein R is hydrogen or a C1 to C10 alkyl group), or a combinationthereof.

The alicyclic group may be a C5 to C30 cycloalkyl group, a C5 to C30cycloalkenyl group, or a C3 to C30 heterocycloalkyl group.

The aromatic group may be a C6 to C30 aryl group or a C2 to C30heteroaryl group.

In an embodiment, R² of the Chemical Formula 2 may be an alicyclicgroup, for example a C5 to C30 cycloalkyl group, a C5 to C30cycloalkenyl group, or a C3 to C30 heterocycloalkyl group.

The multifunctional photo-curable cross-linking agent may be selectedfrom difunctional meth(acrylate) such as hexanediol di(meth)acrylate,tricyclodecane dimethanol di(meth)acrylate, 1,10-decanedioldi(meth)acrylate, butanediol di(meth)acrylate, neophenylglycoldi(meth)acrylate, neopentylglycol di(meth)acrylate, nonylpropyleneglycoldi(meth)acrylate, dipropyleneglycol di(meth)acrylate, diethyleneglycoldi(meth)acrylate, ethyleneglycol di(meth)acrylate,tetratriethyleneglycol di(meth)acrylate, ethoxylated dibisphenol Adi(meth)acrylate, triethyleneglycol di(meth)acrylate, and the like;tri(meth)acrylate such as trimethylolpropane tri(meth)acrylate,pentaerythritol tri(meth)acrylate, ethoxylated trimethylol(meth)propanetriacrylate, ethylene oxide addition trimethylolpropanetri(meth)acrylate (“EO-TMPTA”), glycerine propyleneoxide additiontri(meth)acrylate (“PETTA”), ethoxy addition pentaerythritoltetra(meth)acrylate and dipentaerythritol hexa(meth)acrylate (“DPHA”),and the like.

The R² may be selected from an aliphatic group, an alicyclic group, andan aromatic group which are substituted with one substituent selectedfrom an amino group (NRR′, wherein R and R′ are independently hydrogenor a C1 to C6 alkyl group), an azido group (—N₃), an amidino group(—C(═NH)NH₂), a hydrazine group (—NHNH₂), a hydrazono group (═N(NH₂), analdehyde group (—C(═O)H), a carbamoyl group (—C(═O)NH₂), a thiol group(—SH), or an ester group (—C(═O)OR, wherein R is a C1 to C6 alkyl groupor a C6 to C12 aryl group), and a combination thereof. The R²substituted with the foregoing substituents may have improved affinityfor the semiconductor nanocrystals 13 and 15 and thus may improvedispersion of the semiconductor nanocrystals 13 and 15. In the matrixpolymer 19, a content (A₁) of a first structural unit derived from themultifunctional photo-curable oligomer, a content (A₂) of a secondstructural unit derived from mono-functional photo-curable monomer, anda content (A₃) of a third structural unit derived from multifunctionalphoto-curable cross-linking agent satisfy the following Equation 1.A ₁<(A ₂ +A ₃)  Equation 1

The A₁:(A₂+A₃) ratio may be from about 10:90 to about 55:45, and in anembodiment, from about 15:85 to about 40:60, and may be a weight ratio.Within the above the ranges, dispersion of the semiconductornanocrystals 13 and 15 may be ensured sufficiently and mechanicalstrength such as tensile strength, tensile elongation, and the like maybe improved.

In the matrix polymer 19, the first structural unit derived from themultifunctional photo-curable oligomer may be included in an amount ofgreater than or equal to about 10 parts by weight and less than or equalto about 45 parts by weight, and in an embodiment, in an amount ofgreater than or equal to about 20 parts by weight and less than or equalto about 40 parts by weight based on 100 parts by weight of the matrixpolymer 19. Within the above ranges, film-forming properties andmechanical properties of the matrix polymer may be improved.

In the matrix polymer 19, the second structural unit derived from themono-functional photo-curable monomer may be included in an amount ofgreater than or equal to about 10 parts by weight and less than or equalto about 50 parts by weight, and in an embodiment, may be greater thanor equal to about 20 parts by weight and less than or equal to about 40parts by weight based on 100 parts by weight of the matrix polymer 19.Within the above ranges, mechanical properties of semiconductornanocrystal-polymer composite film 12 are maintained and dispersion ofthe semiconductor nanocrystal 13 and 15 is improved.

In the matrix polymer 19, the third structural unit derived from themultifunctional photo-curable cross-linking agent may be included in anamount of greater than or equal to about 10 parts by weight and lessthan or equal to about 70 parts by weight, and in an embodiment, greaterthan or equal to about 20 parts by weight and less than or equal toabout 60 parts by weight based on 100 parts by weight of the matrixpolymer. Within the above ranges, mechanical properties of semiconductornanocrystal-polymer composite film 12 and dispersion of thesemiconductor nanocrystal 13 and 15 are improved.

The mono-functional photo-curable monomer and multifunctionalphoto-curable cross-linking agent may include the same functional group.When the mono-functional photo-curable monomer and multifunctionalphoto-curable cross-linking agent include the same functional group,mechanical properties of a film obtained by photocuring may be improved.

In the matrix polymer 19 of the semiconductor nanocrystal-polymercomposite film 12, semiconductor nanocrystals 13 and 15 having colorreproducibility and color purity are dispersed.

The semiconductor nanocrystals 13 and 15 may be selected from a GroupII-VI compound, a Group III-V compound, a Group IV-VI compound, a GroupIV element, a Group IV compound, and a combination thereof, wherein theterm “Group” refers to a group of the Periodic Table of the Elements.

The Group II-VI compound includes a binary compound selected from CdSe,CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, and a mixturethereof; a ternary compound selected from CdSeS, CdSeTe, CdSTe, ZnSeS,ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS,CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, and a mixturethereof; or a quaternary compound selected from HgZnTeS, CdZnSeS,CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe,HgZnSTe, and a mixture thereof. The Group III-V compound includes abinary compound selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs,AlSb, InN, InP, InAs, InSb, and a mixture thereof; a ternary compoundselected from GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb,AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, and a mixturethereof; or a quaternary compound selected from GaAlNAs, GaAlNSb,GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP,InAlNAs, InAlNSb, InAlPAs, InAlPSb, and a mixture thereof. The GroupIV-VI compound includes a binary compound selected from SnS, SnSe, SnTe,PbS, PbSe, PbTe, and a mixture thereof; a ternary compound selected fromSnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, and amixture thereof; or a quaternary compound selected from SnPbSSe,SnPbSeTe, SnPbSTe, and a mixture thereof. The Group IV element may beselected from Si, Ge, and a mixture thereof. The Group IV compoundincludes a binary compound selected from SiC, SiGe, and mixture thereof.

Herein, the element, the binary compound, the ternary compound, or thequaternary compound may be present in a particle having a substantiallyuniform concentration or in a particle having different concentrationdistributions in the same particle. In addition, each particle may havea core/shell structure in which a first semiconductor nanocrystal issurrounded by a second semiconductor nanocrystal. The core and shell mayhave an interface, which may have an element concentration gradientdecreasing in a direction from the surface of the particle to the centerthereof.

The semiconductor nanocrystals 13 and 15 may have a full width at halfmaximum (“FWHM”) of less than or equal to about 45 nanometers (“nm”), inan embodiment, less than or equal to about 40 nm, and in anotherembodiment, less than or equal to about 30 nm in the light emittingwavelength spectrum. Within the range, color purity or colorreproducibility of the film for a backlight unit 10 may be improved.

The semiconductor nanocrystals 13 and 15 may have a particle diameter(e.g., an average largest particle diameter) ranging from about 1nanometer (“nm”) to about 100 nm, in an embodiment, about 1 nm to about50 nm, and in another embodiment, about 1 nm to about 10 nm, or about 2nm to about 25 nm.

In addition, the semiconductor nanocrystals 13 and 15 may have acommonly-used shape in this art so the shape is not specificallylimited. Examples thereof may include spherical, elliptical,tetrahedral, octahedral, cylindrical, polygonal, conical, columnar,tubular, helical, pyramidal, multi-armed, or cubic nanoparticles,nanotubes, nanowires, nanofiber, nanoplate particles, or the like.

The semiconductor nanocrystal-polymer composite film 12 may include thesemiconductor nanocrystals 13 and 15 in an amount of about 0.1 percentby weight (“wt %”) to about 20 wt %, in an embodiment, about 0.2 wt % toabout 15 wt %, and in another embodiment, about 0.3 wt % to about 10 wt%. When the amount of the semiconductor nanocrystal is within the aboveranges, good dispersion of the semiconductor nanocrystal in thecomposite film may be obtained and color conversion ranges may be easilycontrolled.

Even though the semiconductor nanocrystal-polymer composite film 12includes a mixture of a red semiconductor nanocrystal and a greensemiconductor nanocrystal in FIG. 1, the semiconductornanocrystal-polymer composite film 12 may include a first layerincluding the red semiconductor nanocrystal 13 and a second layerincluding a green semiconductor nanocrystal 15.

The semiconductor nanocrystal-polymer composite film 12 may furtherinclude an inorganic oxide. The inorganic oxide may include silica,alumina, titania, zirconia, and a combination thereof. Such an inorganicoxide may act as a light diffusion material. The inorganic oxide may beincluded in an amount of about 1 wt % to about 20 wt %, and in anembodiment, about 5 wt % to 15 wt % based on the total weight of thesemiconductor nanocrystal-polymer composite film 12.

The semiconductor nanocrystal-polymer composite film 12 may have athickness of about 10 micrometers to about 100 micrometers, and in anembodiment, 10 micrometers to about 75 micrometers. The semiconductornanocrystal-polymer composite film 12 may have storage modulus of about25 megaPascal (“MPa”) to about 85 MPa and tensile strength of about 15MPa to about 35 MPa.

The semiconductor nanocrystals 13 and 15 dispersed in the semiconductornanocrystal-polymer composite film 12 may have a particle size of about0.2 micrometer to about 1 micrometer, and in an embodiment, about 0.3micrometer to about 0.7 micrometer. Within the above ranges, thesemiconductor nanocrystals 13 and 15 may be uniformly dispersed in thematrix polymer 9. The film for a backlight unit 10 may further includebarrier films 17 a and 17 b disposed on at least one side of thesemiconductor nanocrystal-polymer composite film 12. The film for abacklight unit 10 may further include one of the barrier films 17 a and17 b.

The barrier film 17 a and 17 b may include a polymer selected from apolyester, a polycarbonate, a polyolefin, a cyclic olefin polymer(“COP”), a polyimide (which includes polyetherimides), a polymerizationproduct of a first monomer including at least two thiol (—SH) groups ata terminal end and a second monomer including at least two carbon-carbonunsaturated bond-containing groups, and a combination thereof. Thepolyester may include polyethyleneterephthalate,polybutyleneterephthalate, polytrimethylene terephthalate,polyethylenenaphthalate, polyvinylacetate, polyethylene adipate,polyhydroxyalkanoate, polyhydroxybutyrate,poly(3-hydroxybutyrate-co-3-hydroxyvalerate, and the like. Thepolyolefin may include polyethylene, polypropylene, polymethylpentene,polybutene-1, polystyrene, and the like. The cyclic olefin polymerrefers to a polymer obtained by chain copolymerization of cyclicmonomers such as norbornene, tetracyclododecene with linear olefinmonomers such as ethylene.

The polymerization product of the first monomer including at least twothiol (—SH) groups at the terminal end and a second monomer including atleast two carbon-carbon unsaturated bond-containing groups may be apolymer of a first monomer including at least two thiol (—SH) groups ata terminal end represented by the following Chemical Formula 3 and asecond monomer including at least two carbon-carbon unsaturatedbond-containing groups represented by the following Chemical Formula 4.

In Chemical Formula 3,

R³ is hydrogen; a substituted or unsubstituted C1 to C30 alkyl group; asubstituted or unsubstituted C6 to C30 aryl group; a substituted orunsubstituted C3 to C30 heteroaryl group; a substituted or unsubstitutedC3 to C30 cycloalkyl group; a substituted or unsubstituted C3 to C30heterocycloalkyl group; a substituted or unsubstituted C2 to C30 alkenylgroup; a substituted or unsubstituted C2 to C30 alkynyl group; asubstituted or unsubstituted C3 to C30 alicyclic organic group includinga double bond or triple bond in a ring; a substituted or unsubstitutedC3 to C30 heterocycloalkyl group including a double bond or triple bondin a ring; a C3 to C30 alicyclic group substituted with a C2 to C30alkenyl group or a C2 to C30 alkynyl group; a C3 to C30 heterocycloalkylgroup substituted with a C2 to C30 alkenyl group or a C2 to C30 alkynylgroup; a hydroxy group (—OH); an amino group (—NH₂); a substituted orunsubstituted C1 to C30 amine group (—NRR′, wherein R and R′ areindependently hydrogen or a C1 to C20 alkyl group); an isocyanate group(—N═C═O), an isocyanurate group; a (meth)acrylate group; a halogen;—ROR′ (wherein R is a substituted or unsubstituted C1 to C20 alkylenegroup and R′ is hydrogen or a C1 to C20 alkyl group); —C(═O)OR′ (whereinR′ is hydrogen or a C1 to C20 alkyl group); —CN; or —C(═O)ONRR′ (whereinR and R′ are independently hydrogen or a C1 to C20 alkyl group),

L₁ is a single bond; a substituted or unsubstituted C1 to C30 alkylenegroup; a substituted or unsubstituted C6 to C30 arylene group; asubstituted or unsubstituted C3 to C30 heteroarylene group; asubstituted or unsubstituted C3 to C30 cycloalkylene group; or asubstituted or unsubstituted C3 to C30 heterocycloalkylene group,

Y₁ is a single bond; a substituted or unsubstituted C1 to C30 alkylenegroup; a substituted or unsubstituted C2 to C30 alkenylene group; or aC1 to C30 alkylene group or a C2 to C30 alkenylene group wherein atleast one methylene group (—CH₂—) is replaced by a sulfonyl group(—S(═O)₂—), a carbonyl group (—C(═O)—), an ether group (—O—), a sulfidegroup (—S—), a sulfoxide group (—S(═O)—), an ester group (—C(═O)O—), anamide group (—C(═O)NR—) (wherein R is hydrogen or a C1 to C10 alkylgroup), —NR— (wherein R is hydrogen or a C1 to C10 alkyl group), or acombination thereof,

m is an integer of greater than or equal to 1,

k1 is an integer of 0 or greater than or equal to 1,

k2 is an integer of greater than or equal to 1, and

the sum of m and k2 is an integer of greater than or equal to 3.

In the above Chemical Formula 3, m does not exceed the valence of Y₁,and k1 and k2 do not exceed the valence of the L₁. In an embodiment, thesum of m and k2 ranges from 3 to 6, in another embodiment, from 3 to 5,and in still another embodiment, m may be 1, k1 may be 0, and k2 may be3 or 4.

In Chemical Formula 4,

X is a C2 to C30 aliphatic organic group including a carbon-carbondouble bond or a carbon-carbon triple bond, a C6 to C30 aromatic organicgroup including a carbon-carbon double bond or a carbon-carbon triplebond, or a C3 to C30 alicyclic organic group including a carbon-carbondouble bond or a carbon-carbon triple bond,

R⁴ is hydrogen; a substituted or unsubstituted C1 to C30 alkyl group; asubstituted or unsubstituted C6 to C30 aryl group; a substituted orunsubstituted C3 to C30 heteroaryl group; a substituted or unsubstitutedC3 to C30 cycloalkyl group; a substituted or unsubstituted C3 to C30heterocycloalkyl group; a substituted or unsubstituted C2 to C30 alkenylgroup; a substituted or unsubstituted C2 to C30 alkynyl group; asubstituted or unsubstituted C3 to C30 alicyclic organic group includinga double bond or triple bond in a ring; a substituted or unsubstitutedC3 to C30 heterocycloalkyl group including a double bond or triple bondin a ring; a C3 to C30 alicyclic group substituted with a C2 to C30alkenyl group or a C2 to C30 alkynyl group; a C3 to C30 heterocycloalkylgroup substituted with a C2 to C30 alkenyl group or a C2 to C30 alkynylgroup; a hydroxy group (—OH); an amino group (—NH₂); a substituted orunsubstituted C1 to C30 amine group (—NRR′, wherein R and R′ areindependently hydrogen or a C1 to C30 alkyl group); an isocyanate group(—N═C═O); an isocyanurate group; a (meth)acrylate group; a halogen;—ROR′ (wherein R is a substituted or unsubstituted C1 to C20 alkylenegroup and R′ is hydrogen or a C1 to C20 alkyl group); an acyl halidegroup (—RC(═O)X, wherein R is a substituted or unsubstituted alkylenegroup, and X is a halogen); —C(═O)OR′ (wherein R′ is hydrogen or a C1 toC20 alkyl group); —CN; or —C(═O)ONRR′ (wherein R and R′ areindependently hydrogen or a C1 to C20 alkyl group),

L₂ is a single bond, a substituted or unsubstituted C1 to C30 alkylenegroup, a substituted or unsubstituted C6 to C30 arylene group, or asubstituted or unsubstituted C3 to C30 heteroarylene group,

Y₂ is a single bond; a substituted or unsubstituted C1 to C30 alkylenegroup; a substituted or unsubstituted C2 to C30 alkenylene group; or aC1 to C30 alkylene group or a C2 to C30 alkenylene group wherein atleast one methylene group (—CH₂—) is replaced by a sulfonyl group(—S(═O)₂—), a carbonyl group (—C(═O)—), an ether group (—O—), a sulfidegroup (—S—), a sulfoxide group (—S(═O)—), an ester group (—C(═O)O—), anamide group (—C(═O)NR—) (wherein R is hydrogen or a C1 to C10 alkylgroup), —NR— (wherein R is hydrogen or a C1 to C10 alkyl group), or acombination thereof, n is an integer of greater than or equal to 1,

k3 is an integer of 0 or greater than or equal 1,

k4 is an integer of greater than or equal to 1, and

the sum of n and k4 is an integer of greater than or equal to 3.

In Chemical Formula 4, n does not exceed the valence of Y₂, and k3 andk4 does not exceed the valence of the L₂. In an embodiment, the sum of nand k4 may range from 3 to 6, in an embodiment, 3 to 5, and in anotherembodiment, n is 1, k3 is 0, and k4 is 3 or 4.

The first monomer of the above Chemical Formula 3 may include compoundsof the following Chemical Formulas 3-2 to 3-5.

The second monomer of the above Chemical Formula 4 may include thecompounds represented by the following Chemical Formulas 4-3 to 4-5.

The barrier films 17 a and 17 b may further include an inorganic oxide.The inorganic oxide may be selected from silica, alumina, titania,zirconia, and a combination thereof. These inorganic oxides may act as alight diffusion material. The inorganic oxide may be included in anamount of about 1 wt % to about 20 wt %, and in an embodiment, fromabout 1% to about 10%, based on the total amount of each barrier films17 a and 17 b. In addition, when included within the range, the film iseasily fabricated, moisture permeation may be decreased. Such a film maybe conveniently used as a diffusion film.

The barrier films 17 a and 17 b may also have a protruded and recessedpattern having a predetermined size on the surface without contactingthe semiconductor nanocrystal-polymer composite film 12. The barrierfilms 17 a and 17 b with the protruded and recessed pattern on thesurfaces may diffuse light emitted from the LED light source.

The barrier films 17 a and 17 b may have oxygen permeability rangingfrom about 0.01 cubic centimeter×millimeter per (squaremeter×day×atmosphere) (“cm³×mm·/m²·×day·×atm”) to about 0.5cm³×mm·/m²·×day·×atm and a water vapor permeability rate of about 0.001gram per (meter×day) (“g/m²·×day”) to about 0.01 g/m²·×day. When barrierfilms 17 a and 17 b have the oxygen permeability and the moisturepermeation within the foregoing ranges, the semiconductor nanocrystalmay be stably protected against the extraneous conditions.

The barrier films 17 a and 17 b may have a thickness of about 10 nm toabout 100 micrometers (“μm”), and in an embodiment, about 1 μm to about50 μm on a surface of the semiconductor nanocrystal-polymer compositefilm 12.

The semiconductor nanocrystal-polymer composite film 12 may bemanufactured as follows: semiconductor nanocrystals dispersed in asolvent is mixed with the mono-functional photo-curable monomer toprepare a mixture; mixing a multifunctional photo-curable oligomer, amultifunctional photo-curable cross-linking agent, and a photoinitiatorwith the mixture to prepare a photo-curable composition; and coating thephoto-curable composition on a substrate to provide a photo-curablecomposition coating; and photo-curing the photo-curable compositioncoating to prepare the semiconductor nanocrystal-polymer composite film12.

The method of mixing is not particularly critical and may be carried outby a variety of means, for example dispersion, blending, stirring,sonication, sparging, milling, shaking, centrifugal circulating pumpmixing, blade mixing, impact mixing, jet mixing, homogenization,co-spraying, high sheer mixing, single pass and multi-pass mixing, andthe like.

The solvent may be an aromatic hydrocarbon-based solvent or ahalogenated aliphatic hydrocarbon-based solvent.

The mono-functional photo-curable monomer has good affinity for asolvent where the semiconductor nanocrystal is dispersed and organicligands positioned on a surface of the semiconductor nanocrystal toimprove dispersion of the semiconductor nanocrystal. The mono-functionalphoto-curable monomer is mixed with the semiconductor nanocrystal, andthen mixed with the multifunctional photo-curable oligomer,multifunctional photo-curable cross-linking agent, and photoinitiator.Thereby, particles of the semiconductor nanocrystals may be uniformlydistributed in the photo-curable composition.

The use amounts of the mono-functional photo-curable monomer,multifunctional photo-curable oligomer, and multifunctionalphoto-curable cross-linking agent may be adjusted in accordance witheach content (A₁, A₂, and A₃) of structural units in the matrix polymer19.

The photoinitiator may include at least one compound selected from1-hydroxycyclohexylphenylketone,2-methyl-1(4-(methylthio)phenyl)-2-morpholinyl-1-propane, hydroxyketone,benzophenone, benzyldimethylketone,2-hydroxy-2-methyl-1-phenyl-propan-1-one, bisacylphosphineoxide,diphenyl(2,4,6-trimethylbenzoyl)-phosphineoxide and phosphineoxidephenylbis(2,3,6-trimethylbenzoyl). The photoinitiator may be used in anamount of about 0.1 to about 5 parts by weight, and in an embodiment, ofabout 0.1 to about 3 parts by weight, based on 100 parts by weight ofthe photo-curable composition.

The photo-curable composition may be coated on a substrate using spincoating, screen printing, gravure printing, and the like.

The substrate may be a glass, transparent plastics, and the like havinglight transmittance of greater than or equal to 85%, and the transparentplastics may include polyester, polycarbonate, polyimide, polyolefin,and the like, but is not limited thereto. The transparent plastics mayact as barrier films 17 a and 17 b of the semiconductornanocrystal-polymer composite film 12.

The photo-curing may be performed by radiating UV at a dose of about 500milliJoule per square centimeter (“mJ/cm²”) to about 2,000 mJ/cm².

As described above, the semiconductor nanocrystal-polymer composite film12 may be prepared by using a photo-curable composition including thesemiconductor nanocrystal, multifunctional photo-curable oligomer,mono-functional photo-curable monomer, multifunctional photo-curablecross-linking agent, and photoinitiator. When a light emittingwavelength of the photo-curable composition is λ_(A) and an intrinsiclight emitting wavelength of the semiconductor nanocrystal is λ_(B), adifference |λ_(A)−λ_(B)| may be in the range of less than or equal toabout 5 nm, and in an embodiment, may be less than or equal to about 3nm. A full width of half maximum of the photo-curable composition isnearly consistent with an intrinsic full width of half maximum of thesemiconductor nanocrystal, and luminous efficiency of the photo-curablecomposition is 80% of luminous efficiency of the semiconductornanocrystal. When the light emitting wavelength, full width of halfmaximum, and luminous efficiency are within the above ranges, thephoto-curable composition does not inhibit light emittingcharacteristics of the semiconductor nanocrystal. The semiconductornanocrystal-polymer composite film 12 may have a predetermined patternon at least one surface. The predetermined pattern may have a protrudedand/or recessed portion.

The predetermined pattern may be provided as follows: between coatingthe photo-curable composition and photo-curing processes in the methodof manufacturing semiconductor nanocrystal-polymer composite film, thephoto-curable composition coating may be contacted with a mold with apredetermined pattern, and after the pattern is formed the mold isremoved. The predetermined pattern of the semiconductornanocrystal-polymer composite film 12 may be further coated with thephoto-curable composition to provide a semiconductor nanocrystal-polymercomposite film having at least two thin layers.

An adhesion layer may be further positioned between the semiconductornanocrystal-polymer composite film 12 and barrier films 17 a and 17 b,even though FIG. 1 does not show the adhesion layer. The adhesion layermay be made of a pressure sensitive adhesive having excellenttransparency. When the barrier film 17 b is a substrate, the adhesionlayer may not be needed.

A protection film may be positioned on an outer surface of the film fora backlight unit 10 of FIG. 1, that is to say, one side of barrier films17 a and 17 b not contacting the semiconductor nanocrystal-polymercomposite film 12. The protection film may be made of polyester such aspolyethylene terephthalate as a releasing film.

FIG. 2 is a schematic view of a film 20 for a backlight unit accordingto another embodiment.

Referring to FIG. 2, the film 20 for a backlight unit includes asemiconductor nanocrystal-polymer composite film 22 including a firstcomposite 23 including a red semiconductor nanocrystal 23 a and a firsttransparent matrix 23 b; a second composite 25 including a greensemiconductor nanocrystal 25 a and a second transparent matrix 25 b; anda matrix polymer 19. The red semiconductor nanocrystal 23 a and greensemiconductor nanocrystal 25 a are the same as the semiconductornanocrystals 13 and 15 shown in FIG. 1. As shown in FIG. 2, a primaryparticle of the red semiconductor nanocrystal 23 a forms a cluster toprovide a secondary particle of a first composite 23, and a primaryparticle of the green semiconductor nanocrystal 25 a forms a cluster toprovide a secondary particle of a second composite 25.

The first transparent matrix 23 b and the second transparent matrix 25 bmay be a silicone resin; an epoxy resin; a (meth)acrylate-based resin;an organic/inorganic hybrid polymer; polycarbonate; polystyrene;polyolefin such as polyethylene, polypropylene, polyisobutylene, and thelike; a copolymer of a first monomer including at least two thiol (—SH)groups at a terminal end and a second monomer including at least twocarbon-carbon unsaturated bond-containing groups; silica; metal oxide;or a combination thereof.

Herein, the copolymer of a first monomer including at least two thiol(—SH) groups at a terminal end and a second monomer including at leasttwo carbon-carbon unsaturated bond-containing groups is the same asdescribed with regard to the barrier films 17 a and 17 b. The metaloxide may include alumina, titania, zirconia, and the like.

The semiconductor nanocrystal-polymer composite film 22 shown in FIG. 2is prepared by encapsulating the semiconductor nanocrystal 23 a and 25 awith the first transparent matrix 23 b or the second transparent matrix25 b to provide the first composite 23 and the second composite 25 anddispersing the first composite 23 and the second composite 25 in amatrix polymer 19.

The matrix polymer 19 is a polymer produced by polymerization of amultifunctional photo-curable oligomer, a mono-functional photo-curablemonomer, and a multifunctional photo-curable cross-linking agent, and isthe same as the matrix polymer 19 shown in FIG. 1.

The semiconductor nanocrystal-polymer composite film 22 shown in FIG. 2includes a mixture of the first composite 23 including the redsemiconductor nanocrystal 23 a and the first transparent matrix 23 b;and the second composite 25 includes a mixture of the greensemiconductor nanocrystal 25 a and the second transparent matrix 25 b.Alternately, a first layer including the first composite 23 and a secondlayer including the second composite 25 may be positioned.

The first composite 23 and the second composite 25 may each haveparticle size of less than or equal to about 2 micrometers, in anembodiment, less than or equal to about 1 micrometer, and in anotherembodiment, about 100 nanometers to about 2 micrometers or about 100nanometers to about 1 micrometer.

An adhesion layer may be further positioned between the semiconductornanocrystal-polymer composite film 22 and barrier films 17 a and 17 b,even though FIG. 2 does not show the adhesion layer. The adhesion layermay be made of a pressure sensitive adhesive having excellenttransparency. When the barrier film 17 b is a substrate, the adhesionlayer may not be needed.

A protection film may be positioned on an outer surface of the film fora backlight unit 20 of FIG. 2, that is to say, one side of barrier films17 a and 17 b not contacting the semiconductor nanocrystal-polymercomposite film 22. The protection film may be made of polyester such aspolyethylene terephthalate as a releasing film.

FIG. 3 is a schematic view of a film 30 for a backlight unit accordingto another embodiment.

Referring to FIG. 3, the film for a backlight unit 30 includessemiconductor nanocrystal-polymer composite film 32 including atransparent matrix 18 encapsulating a red semiconductor nanocrystal 13and a green semiconductor nanocrystal 15, which is dispersed in thematrix polymer 19. As shown in FIG. 3, primary particles of the redsemiconductor nanocrystal 13 and green semiconductor nanocrystal 15 formcluster to provide a secondary particle of the composite.

The composite may have a particle size of less than or equal to about 2micrometers, in an embodiment, less than or equal to about 1 micrometer,and in another embodiment, about 100 nanometers to about 2 micrometersor about 100 nanometers to about 1 micrometer.

An adhesion layer may be further positioned between the semiconductornanocrystal-polymer composite film 32 and barrier films 17 a and 17 b,even though FIG. 3 does not show the adhesion layer. The adhesion layermay be made of a pressure sensitive adhesive having excellenttransparency. When the barrier film 17 b is a substrate, the adhesionlayer may not be needed.

A protection film may be positioned on an outer surface of the film fora backlight unit 30 of FIG. 3, that is to say, one side of barrier films17 a and 17 b not contacting the semiconductor nanocrystal-polymercomposite film 32. The protection film may be made of polyester such aspolyethylene terephthalate as a releasing film.

The film for a backlight units 20 and 30 shown in FIGS. 2 and 3 may beprepared by encapsulating a semiconductor nanocrystal by transparentmatrix to provide a cluster and dispersing the same in a solvent; mixingthe cluster with a mono-functional photo-curable monomer to provide amixture; mixing the mixture with a multifunctional photo-curableoligomer, a multifunctional photo-curable cross-linking agent, and aphotoinitiator to provide a photo-curable composition; and coating thephoto-curable composition on a substrate followed by photo-curing toprovide a film.

Hereinafter, referring to FIGS. 4 to 6, liquid crystal display devicesincluding the films for backlight units 10, 20, and 30 are described.FIGS. 4 to 6 are schematic views of liquid crystal display devices 100,200, and 300 including films for a backlight unit according toembodiments.

Referring to FIG. 4, the liquid crystal display device 100 includes abacklight unit 101 and a liquid crystal panel 500 realizing apredetermined colored image using white light provided from thebacklight unit 101.

The backlight unit 101 includes a light emitting diode (“LED”) lightsource 110, the films 10, 20, and 30 for a backlight unit to convert thelight emitted from the LED light source 110 into white light, and alight guide panel 120 disposed therebetween to guide the light emittedfrom the LED light source 110 toward the films 10, 20, and 30 for abacklight unit. The LED light source 110 includes a plurality of LEDchips emitting lights having predetermined wavelengths. The LED lightsource 110 may be a blue light-emitting LED light source or anultraviolet (“UV”)-emitting LED light source.

A reflector (not shown) may be further positioned on the lower side ofthe light guide panel 120.

The films 10, 20, and 30 for a backlight unit are disposed separate fromthe LED light source 110 and acts as a light converting layer to convertlight emitted from the LED light source 110 to white light and thusprovides the white light to the liquid crystal panel 500.

When the light emitted from the LED light source 110 is passed throughthe films 10, 20, and 30 for a backlight unit including semiconductornanocrystal, blue light, green light, and red light are mixed to emitwhite light. By changing the compositions and sizes of semiconductornanocrystal in the films 10, 20, and 30 for a backlight unit, the blue,green, and red lights may be controlled to a desirable ratio so as toprovide white light having excellent color reproducibility and colorpurity. Such white light may have color coordinates where Cx is about0.20 to about 0.50 and Cy is about 0.18 to about 0.42 in a CIE 1931chromaticity diagram. In an embodiment, the white light may have colorcoordinates where Cx is about 0.24 to about 0.50 and Cy is about 0.24 toabout 0.42 in a CIE 1931 chromaticity diagram.

For example, when the LED light source is a blue LED light source, thefilms 10, 20, and 30 for a backlight unit include a green semiconductornanocrystal and a red semiconductor nanocrystal to provide a ratio ofoptical density (“OD”) (absorbance of first absorption maximumwavelength at UV-Vis absorption spectrum) of about 2:1 to about 7:1, andin an embodiment, about 3:1 to about 6:1.

The light emitting peak wavelength of the blue LED light source may bein a range of about 430 nm to about 460 nm; the green semiconductornanocrystal may have a light emitting peak wavelength ranging from about520 nm to about 550 nm; and the red semiconductor nanocrystal may have alight emitting peak wavelength ranging from about 590 nm to about 640nm.

The films 10, 20, and 30 for a backlight unit may include a plurality oflayers including a first layer including a red semiconductornanocrystal; and a second layer including a green semiconductornanocrystal. In this case, the plurality of layers may be disposed sothat the light emitting wavelength of energy is decreased going towardthe LED light source 110. For example, if the LED light source 110 is ablue LED light source, the films 10, 20, and 30 for a backlight unit mayinclude a layer including a red semiconductor nanocrystal and a layerincluding a green semiconductor nanocrystal that are sequentiallystacked in a direction away from the LED light source 110.

Even though not shown in FIG. 4, on the films 10, 20, and 30 for abacklight unit, at least one film selected from a diffusion plate, aprism sheet, a microlens sheet, and a brightness enhancement film (e.g.,double brightness enhancement film (“DBEF”)) may be further disposed.

In addition, the films 10, 20, and 30 for a backlight unit may bedisposed between at least two films selected from a light guide panel, adiffusion plate, a prism sheet, a microlens sheet, and a brightnessenhancement film (e.g., double brightness enhancement film (“DBEF”)).

FIG. 5 is a schematic view of a liquid crystal display device 200according to another embodiment. The liquid crystal display device 200includes films 10, 20, and 30 for a backlight unit between a light guide120 and a diffusion plate 140. The diffusion plate 140 improvesuniformity of light provided from the LED light source 110.

The films 10, 20, and 30 for a backlight unit and the forgoing films maybe disposed in contact with or apart from each other.

The films 10, 20, and 30 for a backlight unit may include a plurality oflayers. In this case, the plurality of layers may be disposed so thatthe light emitting wavelength of energy is decreased toward the LEDlight source 110. For example, when the LED light source 110 is a blueLED light source, the film for a backlight unit 10 and 20 may include afirst layer including a red semiconductor nanocrystal and a second layerincluding a green semiconductor nanocrystal that are sequentiallystacked in a direction away from the LED light source 110.

The white light emitted from the backlight unit 201 is incident towardthe liquid crystal panel 500. The liquid crystal panel 500 realizes apredetermined color image using the white light incident from thebacklight unit 201. The liquid crystal panel 500 may have a structure inwhich a first polarizer 501, a liquid crystal layer 502, a secondpolarizer 503, and a color filter 504 are sequentially disposed (thestructure of the liquid crystal panel 500 is also indicated in FIGS. 4and 6). The white light emitted from the backlight unit 201 istransmitted through the first polarizer 501, the liquid crystal layer502, and the second polarizer 503 and then into the color filter 504 toexpress a predetermined color image.

FIG. 6 is a schematic view of a liquid crystal display device 300according to another embodiment. Referring to FIG. 6, a backlight unit301 includes a LED light source 310, and the films 10, 20, and 30 for abacklight unit spaced apart from the LED light source 310. According tothe present embodiment, the LED light source 310 is disposed under thefilms 10, 20, and 30 for a backlight unit. The LED light source 310 maybe an LED light source emitting blue light or an LED light sourceemitting ultraviolet (“UV”) light.

A light passage may be disposed between the LED light source 310 and thefilms 10, 20, and 30 for a backlight unit, and for example, a lightguide panel 320 may be disposed under the films 10, 20, and 30 for abacklight unit. The light guide panel 320 is used to guide light emittedfrom the LED light source 310 disposed at one side thereof toward thefilms 10, 20, and 30 for a backlight unit. A reflector (not shown) maybe further disposed on the lower surface of the light guide panel 320.

Thereby, the light emitted from the LED light source 310 is providedinto the films 10, 20, and 30 for a backlight unit through the lightguide panel 320, and the incident light is transmitted into the films10, 20, and 30 for a backlight unit to be converted into white light.

On the other hand, the films 10, 20, and 30 for a backlight unit mayinclude a plurality of layers. In this case, the plurality of layers maybe disposed so that a light emitting wavelength of energy is decreasedtoward the LED light source 310. For example, when the LED light source310 is a blue LED light source, the films 10, 20, and 30 for a backlightunit may include a first layer including a red semiconductor nanocrystaland a second layer including a green semiconductor nanocrystal that aresequentially stacked in a direction away from the LED light source 310.

At least one film selected from a diffusion plate, a prism sheet, amicrolens sheet, and a brightness improvement film (e.g., doublebrightness enhancement film (“DBEF”)) may be dispersed between the films10, 20, and 30 for a backlight unit and the liquid crystal panel 500.

The films 10, 20, and 30 for a backlight unit may be disposed between atleast two films selected from a light guide, a diffusion plate, a prismsheet, a microlens sheet, and a brightness improvement film (e.g.,double brightness enhancement film (“DBEF”)).

The films 10, 20, and 30 for a backlight unit and the forgoing films maybe disposed in contact with or apart from each other.

As described above, the films 10, 20, and 30 for a backlight unitimprove color reproducibility and color purity due to a semiconductornanocrystal. Since the films 10, 20, and 30 for a backlight unit aredisposed apart from the LED light sources 110 and 310 in a form of asheet, the films 10, 20, and 30 for a backlight unit may not be damagedor degraded by heat generated from the LED light sources 110 and 310.

In addition, since the films 10, 20, and 30 for a backlight unitincluding a matrix resin and the semiconductor nanocrystal may befabricated as a separate film, the fabrication process of the backlightunit may be simplified.

The films 10, 20, and 30 for a backlight unit may be fabricated bycoating a photo-curable composition on at least one film of a backlightunit selected from a light guide, a diffusion plate, a prism sheet, amicrolens sheet, and a brightness improvement film followed byphoto-curing, which contributes fabrication of a light-weight and slimdisplay element.

Hereinafter, the embodiments are illustrated in more detail withreference to examples. However, the following are exemplary embodimentsand are not limiting.

Example 1 Semiconductor Nanocrystal-Polymer Composite Film

Green semiconductor nanocrystals with a light emitting wavelength of 531nm is dispersed into 421.8 mL of toluene to have 0.069 of opticaldensity (“OD”) (absorbance of the first absorption maximum wavelength inUV-Vis absorption spectrum of a 100 times-diluted solution), preparing agreen semiconductor nanocrystal dispersion solution.

Red semiconductor nanocrystals having 619 nm of a light emittingwavelength is dispersed into 111.4 mL of toluene to have 0.028 ofoptical density (“OD”) (absorbance of the first absorption maximumwavelength in UV-Vis absorption spectrum of a 100 times-dilutedsolution, preparing a red semiconductor nanocrystal dispersion solution.

The green semiconductor nanocrystal dispersion and red semiconductornanocrystal dispersion are mixed with 100 mL of ethanol followed bycentrifugation. The supernatant of the solution excluding thecentrifuged precipitant is discarded, and the precipitant is dispersedin 4 g of isobornyl acrylate (Sartomer) 4 g as a mono-functionalphoto-curable monomer. Separately, 3.2 g of (tricyclodecane dimethanoldiacrylate (A-DCP, Shin-nakamura) as a multifunctional photo-curablecross-linking agent and 0.8 g of trimethylol propane triacrylate(Aldrich) are mixed and then the resulting mixture is mixed with theprepared dispersion. 2 g of difunctional urethane acrylate oligomer(EB270, Daicel) as a multifunctional photo-curable oligomer is added andagitated. 0.2 g of 1-hydroxy-cyclohexyl-phenyl-ketone and 0.1 g ofdiphenyl(2,4,6-trimethylbenzoyl)-phosphine oxide as a photoinitiator isadded to prepare a photo-curable composition. The multifunctionalphoto-curable oligomer, and the sum of the mono-functional photo-curablemonomer multifunctional photo-curable cross-linking agent are used in aweight ratio of 2:8. The photo-curable composition is coated on a PET(polyethylene terephthalate) substrate film and 1,000 mJ/cm² of UV isradiated to fabricate a semiconductor nanocrystal-polymer composite filmshown in FIG. 3.

Example 2 Semiconductor Nanocrystal-Polymer Composite Film

A semiconductor nanocrystal-polymer composite film is fabricatedaccording to the same method as in Example 1, except that 2 g ofdifunctional epoxy acrylate (Miramer HR 2200, Miwon Commercial Co., Ltd)is used instead of the difunctional urethane acrylate oligomer.

Example 3 Semiconductor Nanocrystal-Polymer Composite Film

A semiconductor nanocrystal-polymer composite film is fabricatedaccording to the same method as in Example 1, except that 1 g ofdifunctional urethane acrylate oligomer (KY-100, Shin-nakamura) is usedinstead of the difunctional urethane acrylate oligomer.

Example 4 Semiconductor Nanocrystal-Polymer Composite Film

A semiconductor nanocrystal-polymer composite film is fabricatedaccording to the same method as in Example 1, except that 1 g ofdifunctional urethane acrylate oligomer (UX-3204, Nippon kayaku) is usedinstead of the difunctional urethane acrylate oligomer.

Example 5 Semiconductor Nanocrystal-Polymer Composite Film

A semiconductor nanocrystal-polymer composite film is fabricatedaccording to the same method as in Example 1, except that 1.6 g of1,10-decanediol diacrylate (A-DOD, Shin-nakamura) as a multifunctionalphoto-curable cross-linking agent is used instead of tricyclodecanedimethanol diacrylate and trimethylol propanetriacrylate.

Example 6 Semiconductor Nanocrystal-Polymer Composite Film

A semiconductor nanocrystal-polymer composite film is fabricatedaccording to the same method as in Example 1, except that 1.6 g of1,6-hexanediol diacrylate (Aldrich) as a multifunctional photo-curablecross-linking agent is used instead of tricyclodecane dimethanoldiacrylate and trimethylol propanetriacrylate.

Example 7 Semiconductor Nanocrystal-Polymer Composite Film

A semiconductor nanocrystal-polymer composite film is fabricatedaccording to the same method as in Example 1, except that themultifunctional photo-curable oligomer, mono-functional photo-curablemonomer and multifunctional photo-curable cross-linking agent are usedin each amount of 4 g, 3 g, and 3 g so that the multifunctionalphoto-curable oligomer and the sum of the mono-functional photo-curablemonomer and multifunctional photo-curable cross-linking agent may be aweight ratio of 4:6.

Example 8 Semiconductor Nanocrystal-Polymer Composite Film

A semiconductor nanocrystal-polymer composite film is fabricatedaccording to the same method as in Example 1, except that thephoto-curable composition according to Example 1 is coated on a PET(polyethylene terephthalate) substrate film to provide a photo-curablecomposition coating. The photo-curable composition coating is treatedwith a mold having a protruded and recessed pattern (w: 440 mm, h: 45mm, gap: 60 mm). After removing a mold, the photo-curable compositioncoating is photo-cured with UV of 1,000 mJ/cm² to provide a patternedsemiconductor nanocrystal-polymer composite film. The photo-curablecomposition is coated on the patterned semiconductor nanocrystal-polymercomposite film and is photo-cured with UV of 1,000 mJ/cm² to provide atwo-layered semiconductor nanocrystal-polymer composite film.

Comparative Example 1 Semiconductor Nanocrystal-Polymer Composite Film

A semiconductor nanocrystal-polymer composite film is fabricatedaccording to the same method as in Example 1, except that themultifunctional photo-curable oligomer, mono-functional photo-curablemonomer and multifunctional photo-curable cross-linking agent are usedin each amount of 6 g, 2 g, and 2 g so that the multifunctionalphoto-curable oligomer and the sum of the mono-functional photo-curablemonomer and multifunctional photo-curable cross-linking agent may be aweight ratio of 6:4.

Comparative Example 2 Semiconductor Nanocrystal-Polymer Composite Film

A semiconductor nanocrystal-polymer composite film is fabricatedaccording to the same method as in Example 1, except that themultifunctional photo-curable oligomer, mono-functional photo-curablemonomer and multifunctional photo-curable cross-linking agent are usedin each amount of 8 g, 1 g, and 1 g so that the multifunctionalphoto-curable oligomer and the sum of the mono-functional photo-curablemonomer and multifunctional photo-curable cross-linking agent may be ina weight ratio of 8:2.

Comparative Example 3 Semiconductor Nanocrystal-Polymer Composite Film

A semiconductor nanocrystal-polymer composite film is fabricatedaccording to the same method as in Example 1, except that amultifunctional photo-curable cross-linking agent is not used, and themultifunctional photo-curable oligomer and mono-functional photo-curablemonomer are each used in an amount of 8 g and 2 g.

Comparative Example 4 Semiconductor Nanocrystal-Polymer Composite Film

A semiconductor nanocrystal-polymer composite film is fabricatedaccording to the same method as in Example 1, except thatmulti-functional urethane acrylate having a high acid value (UXE-3000,Nippon kayaku, acid value: 100 mg of KOH/g) as a multifunctionalphoto-curable cross-linking agent is used.

Examples 9 to Example 15 and Comparative Examples 5 to 8 Fabrication ofBacklight Unit

Blue LED having a light emitting wavelength of 450 nm is used as a lightsource, and a light guide and the semiconductor nanocrystal-polymercomposite films according to Examples 1 to 8 and Comparative Examples 1to 4 are positioned respectively. Then, a prism sheet (Shinwha interteckCo., Ltd.) and DBEF (Shinwha interteck Co., Ltd.) are sequentiallypositioned to fabricate backlight units according to Examples 9 to 15and Comparative Examples 5 to 8.

Light Emitting Characteristics of Semiconductor Nanocrystal Depending onKind of Mono-Functional Photo-Curable Monomer

Affinity for semiconductor nanocrystals of Lauryl acrylate (“LA”),lauryl methacrylate (“LMA”), isooctyl acrylate (“IOA”), isobornylacrylate (“IBA”), and 2-hydroxyethylacrylate (“2-EHA”) as amono-functional photo-curable monomer is evaluated as follows. The greensemiconductor nanocrystal dispersion including a green semiconductornanocrystal having light emitting wavelength of 531 nm according toExample 1 is solvent-exchanged with 3 g of the mono-functionalphoto-curable monomer. The results are shown in FIG. 7. In FIG. 7, the“toluene” indicates that the green semiconductor nanocrystal dispersionincluding a green semiconductor nanocrystal having light emittingwavelength of 531 nm according to Example 1 does not mix with themono-functional photo-curable monomer. As shown in FIG. 7, thedispersions that mix with lauryl acrylate (“LA”), lauryl methacrylate(“LMA”), isooctyl acrylate (“IOA”), and isobornyl acrylate (“IBA”) showssimilar light emitting characteristics to the dispersion that does notmix the mono-functional photo-curable monomer. On the contrary, thedispersion that mixes with 2-hydroxyethylacrylate (“2-EHA”) showsremarkably reduced light emitting characteristics.

Mechanical Properties and Particle Size of SemiconductorNanocrystal-Polymer Composite Film

Mechanical properties of the semiconductor nanocrystal-polymer compositefilms according to Examples 1 to 7 and Comparative Examples 1 to 4 areevaluated. Tensile strength is evaluated by measuring stress usingequipment of Materials Testing Machine LRX plus (LLOYD instruments), andtensile elongation is measured using Physica MCR501 (Anton Paar).Storage modulus is measured using Materials Testing Machine LRX plus(LLOYD instruments). In the following Table 1, the particle size refersto an average particle size of a cluster including primary particles ofa red semiconductor nanocrystal 13 and a green semiconductor nanocrystal15. The particle size is measured using a particle size analyzer(ELS-Z2, Photal Otsuka electronics).

TABLE 1 Yield Point Break Point Storage Particle Stress Elonga- StressElonga- Modulus Size (MPa) tion (%) (MPa) tion (%) (MPa) (μm) Example 125.8 13.5 25.3 35.7 75 0.471 Example 2 31.8 11.7 28.6 26.1 63 0.532Example 3 23.4 16.7 17.4 37.6 59 0.372 Example 4 43.6 12.8 48.0 14.7 670.518 Example 5 22.6 16.7 23.4 29.1 48 0.389 Example 6 27.8 15.1 24.930.4 54 0.416 Example 7 18 18 20.9 59 62 0.504 Comparative 6.2 20.7 13.3101 23 1.204 Example 1 Comparative — — 6 >120 15 1.825 Example 2Comparative 5.7 18.6 15.1 97 17 1.759 Example 3 Comparative 8.3 17.913.7 65 32 4.753 Example 4

Referring to Table 1, the semiconductor nanocrystal-polymer compositefilms according to Examples 1 to 7 show high tensile strength and lowtensile elongation, and have small particle sizes of clusters. On thecontrary, Comparative Examples 1, 3 and 4 show low tensile strength andhigh tensile elongation, and the characteristics in Comparative Example2 are impossible to measure.

Luminance of Backlight Unit

Luminance of the backlight units according to Examples 9 to 15 andComparative Examples 5 to 8 is measured using a spectroradiometer(CS-2000, Minolta). The results are shown in Table 2.

TABLE 2 Luminance (nit) Example 9 526 Example 10 521 Example 11 515Example 12 498 Example 13 520 Example 14 487 Example 15 457 Comparative185 Example 5 Comparative 214 Example 6 Comparative 200 Example 7Comparative 244 Example 8

From the Table 2, backlight units (“BLU”) according to Examples 9 toExample 15 show high luminance compared with those according toComparative Examples 5 to 8.

While this disclosure has been described in connection with what ispresently considered to be practical exemplary embodiments, it is to beunderstood that the invention is not limited to the disclosedembodiments, but, on the contrary, is intended to cover variousmodifications and equivalent arrangements included within the spirit andscope of the appended claims. Therefore, the aforementioned embodimentsshould be understood to be exemplary but not limiting the presentdisclosure in any way.

What is claimed is:
 1. A backlight unit comprising a film for thebacklight unit comprising a semiconductor nanocrystal-polymer compositefilm comprising a semiconductor nanocrystal and a matrix polymer inwhich the semiconductor nanocrystal is dispersed, wherein the matrixpolymer comprises a polymerization product of a multifunctionalphoto-curable oligomer, a mono-functional photo-curable monomer, and amultifunctional photo-curable cross-linking agent, the multifunctionalphoto-curable oligomer has an acid value of less than or equal to about0.1 milligram of KOH/gram, and a content by weight (A₁) of a firststructural unit derived from the multifunctional photo-curable oligomer,a content by weight (A₂) of a second structural unit derived from themono-functional photo-curable monomer, and a content by weight (A₃) of athird structural unit derived from the multifunctional photo-curablecross-linking agent satisfy Equation 1:A ₁<(A ₂ +A ₃).  Equation 1
 2. The backlight unit of claim 1, whereinthe backlight unit comprises an LED light source; the film for abacklight unit disposed separate from the LED light source to convertlight emitted from the LED light source to white light and to providethe converted white light toward liquid crystal panel; and a light guidepanel disposed between the LED light source and the film for a backlightunit.
 3. The backlight unit of claim 1, wherein the backlight unitfurther comprises at least one film selected from a diffusion plate, aprism sheet, a microlens sheet, and a brightness improvement film on thefilm for a backlight unit.
 4. The backlight unit of claim 1, wherein thefilm for a backlight unit is positioned between at least two filmsselected from a light guide, a diffusion plate, a prism sheet, amicrolens sheet, and a brightness improvement film.
 5. The backlightunit of claim 1, wherein the white light provided from the film for abacklight unit has Cx ranging from about 0.20 to about 0.50 and Cyranging from about 0.18 to about 0.42 in a CIE 1931 chromaticitydiagram.
 6. The backlight unit of claim 1, wherein when the LED lightsource is a blue LED light source, the green semiconductor nanocrystaland the red semiconductor nanocrystal is included to provide a ratio ofoptical density of about 2:1 to about 7:1.
 7. The backlight unit ofclaim 1, wherein the film for a backlight unit comprises a plurality oflayers which are disposed to provide a light emitting wavelength oflower energy going toward the LED light source.
 8. A liquid crystaldisplay device comprising the backlight unit according to claim 1.